A method of manufacturing a semiconductor device is disclosed. The manufacturing method includes the following steps in a period from a liquid immersion lithography step to a step in which a film structure of at least an edge of a wafer changes from a timing of the liquid immersion lithography step. At least one of a side surface of an edge of the wafer and an upper surface of the edge of the wafer is inspected. On the basis of an inspection result, at least one of the presence/absence of film peeling and the presence/absence of particle adhesion is determined on at least one of the side surface of the edge of the wafer and the upper surface of the edge of the wafer. A predetermined coping process is performed when it is determined that at least one of the film peeling and the particle adhesion has occurred.