A method of fabricating a nitride-based semiconductor device capable of
reducing contact resistance between a nitrogen face of a nitride-based
semiconductor substrate or the like and an electrode is provided. This
method of fabricating a nitride-based semiconductor device comprises
steps of etching the back surface of a first semiconductor layer
consisting of either an n-type nitride-based semiconductor layer or a
nitride-based semiconductor substrate having a wurtzite structure and
thereafter forming an n-side electrode on the etched back surface of the
first semiconductor layer.