A method is provided for making pure-silica-zeolite films useful as low-k material, specifically, more hydrophobic, homogeneous and with absence of cracks. The method utilizes a UV cure; preferably the UV cure is performed at temperatures at higher than the deposition temperature. The UV-assisted cure removes the organic template promoting organic functionalization and silanol condensation, making the silica-zeolite films more hydrophobic. Moreover, the zeolite material is also mechanically stronger and crack-free. The method can be used to prepare pure-silica-zeolite films more suitable as low-k materials in semiconductor processing.