There is provided an anti-reflective coating forming composition for lithography comprising a polymer having an ethylenedicarbonyl structure and a solvent; an anti-reflective coating formed from the composition; and a method for forming photoresist pattern by use of the composition. The anti-reflective coating obtained from the composition can be used in lithography process for manufacturing a semiconductor device, has a high preventive effect for reflected light, causes no intermixing with photoresists, and has a higher etching rate than photoresists.