A semiconductor laser device includes a coating film for adjustment in reflectance formed at a light-emitting portion of semiconductor, wherein the coating film has a thickness d set to satisfy R (d, n)>R (d, n+0.01) and d>.lamda./n, where n represents a refraction index of the coating film for a lasing wavelength .lamda., and R (d, n) represents a reflectance at the light-emitting portion depending on the thickness d and the refraction index n.