A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.