A method of inspecting an interconnection pattern formed by depositing a metal onto a substrate having an interconnection pattern groove formed on a surface thereof includes: selectively measuring a thickness of a part above the substrate of a metal film formed on the substrate, the part above the substrate being a part constituted of the metal deposited upward from substantially the same surface as the surface of the substrate on which an interconnection pattern groove is formed; and evaluating how successfully the interconnection pattern groove is filled with the metal on the basis of a film thickness value obtained by the selective measurement.