The present invention provides a semiconductor device in which a
bottom-gate TFT or an inverted, stagger TFT arranged in each circuit is
suitably constructed in conformity with the functionality of the
respective circuits, thereby attaining an improvement in the operating
efficiency and reliability of the semiconductor device. In the structure,
LDD regions in a pixel TFT are arranged so as not to overlap with a
channel protection insulating film and to overlap with a gate electrode
by at least a portion thereof. LDD regions in an N-channel TFT of a drive
circuit is arranged so as not to overlap with a channel protection
insulating film and to overlap with a gate electrode by at least a
portion thereof. LDD regions in a P-channel TFT of the drive circuit is
arranged so as to overlap with a channel protection insulating film and
to overlap with the gate electrode.