A frequency selective surface-based (FSS-based) device (200) for processing electromagnetic waves providing at least a third-order response. The FSS-based device includes a first FSS (202), a second FSS (210), and a high quality factor (Q) FSS (206) interposed between the first and second FSSs. A first dielectric layer (204) and a second dielectric layer (208) separate the respective FSS layers. The first and second FSSs have first and second primary resonant frequencies, respectively. The high Q FSS has a lower primary resonant frequency relative to the first and second primary resonant frequencies. The overall electrical thickness of the FSS device can be <.lamda./10. The high Q FSS has a loaded quality factor of at least thirty at the lower primary resonant frequency.