A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.

 
Web www.patentalert.com

< Dielectric spacers for metal interconnects and method to form the same

> Semiconductor device and method of manufacturing the same

> Structures and methods for a flexible bridge that enables high-bandwidth communication
~ 00573