A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula: (Sr.sub.1-xA.sub.x).sub.v(Ti.sub.1-yB.sub.y).sub.wO.sub.3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001.ltoreq.x+y.ltoreq.0.02 (where 0.ltoreq.x.ltoreq.0.02 and 0.ltoreq.y.ltoreq.0.02) and 0.87.ltoreq.v/W.ltoreq.1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes.