A flash memory device includes an array of memory cells for storing data pages, one or more buffers for retrieving the data pages and a logic mechanism that, responsive to a plurality of commands, transfers the data pages between the buffers and a host. Each command subsequent to a first command instructs retrieval of a data page whose address either precedes, or exceeds by more than 1, the address of the data page retrieved by the immediately preceding command, and at least one command does not explicitly specify the address of its retrieved data page. Another similar flash memory device uses two buffers to implement cache reads of data pages whose addresses are specified arbitrarily in the commands subsequent to the first command.

 
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< Predictive programming in non-volatile memory

> Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches

> Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks

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