Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

 
Web www.patentalert.com

< MULTI-BIT STRAM MEMORY CELLS

> Asymmetric Write Current Compensation Using Gate Overdrive for Resistive Sense Memory Cells

> MEMORY DEVICES WITH CONCENTRATED ELECTRICAL FIELDS

~ 00579