In a semiconductor device including: an insulating film (6) formed over a
substrate (1); a buried metal interconnect (10) formed in the insulating
film (6); and a barrier metal film (A1) formed between the insulating
film (6) and the metal interconnect (10), the barrier metal film (A1)
includes a metal oxide film (7), a metal compound film (8) and a metal
film (9) stacked in this order from a side in which the insulating film
(6) exists to a side in which the metal interconnect (10) exists. Elastic
modulus of the metal compound film (8) is larger than that of the metal
oxide film (7).