A non-volatile memory device and fabricating method thereof are provided.
In the deposition to form a tunneling dielectric layer, a composite
charge trapping layer and a block dielectric layer, an ingredient of a
depositing material or the depositing material is adjusted to form a
grading energy level structure, such that carriers are trapped or erased
more easily in accordance with a variation in grading energy level.
Therefore, the carriers are stored more effectively and the probability
that the electric leakage occurs is reduced substantially.