A metal oxide semiconductor field effect transistor includes a
semiconductor substrate; a well region containing an impurity of a first
conductivity type disposed on the semiconductor substrate, the well
region including a source region and a drain region formed by adding an
impurity of a second conductivity type, the source region and the drain
region being separated from each other by a predetermined gap; an
insulating film disposed on the surface of the well region in the gap
between the source region and the drain region; and a gate electrode
disposed on the insulating film. The well region is composed of an
epitaxial layer, and the epitaxial layer includes an impurity layer of
the first conductivity type having a different impurity concentration.