A method of operating a multi-level cell is described, wherein the cell includes a substrate of a first conductivity type, a control gate, a charge-storing layer and two S/D regions of a second conductivity type. The method includes an erasing step that injects charges of a first type into the charge-storing layer and a programming step that includes applying a first voltage to the substrate, a second voltage to both S/D regions and a third voltage to the control gate. The difference between the first and second voltages is sufficient to cause band-to-band tunneling hot holes, and the third voltage causes charges of a second type to enter the charge-storing layer. The third voltage can have 2.sup.n-1 different values, for programming the cell to a predetermined state among 2.sup.n-1 storage states.