Provided is a highly efficient silicon-based light emitting diode (LED)
including a Distributed Bragg Reflector (DBR), an n-type doping layer,
and a p-type substrate structure. The silicon-based LED includes: a
substrate having a p-type mesa substrate structure; an active layer that
is formed on the substrate and has a first surface and a second surface
opposite the first surface; a first reflective layer facing the first
surface of the active layer; a second reflective layer that is located on
either side of the p-type substrate structure and faces the second
surface of the active layer; an n-type doping layer sandwiched between
the active layer and the first reflective layer; a first electrode
electrically connected to the n-type doping layer; and a second electrode
electrically connected to the p-type substrate structure.