A non-volatile memory cell and related system utilize ferroelectric
capacitors as data storage elements. Circuitry is provided for writing to
a single ferroelectric capacitor storage element, as well as to dual
storage elements operating inversely. The storage elements are read by
use of a sense amplifier in a configuration which automatically restores
the original data states, thereby eliminating the need for a subsequent
restore operation. Memory systems are described which include circuitry
for driving bit lines, word lines and drive lines to accomplish both the
write and read operations.