Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.