A deposition method for releasing a stress buildup of a feature over a
semiconductor substrate with dielectric material is provided. The feature
includes lines separated by a gap. The method includes forming a liner
layer over the feature on the semiconductor substrate in a chamber. A
stress of the liner layer over the feature is released to substantially
reduce bending of the lines of the feature. A dielectric film is
deposited over the stress-released liner layer to substantially fill the
gap of the feature.