A light emitting diode includes a substrate tilted toward first and second
directions simultaneously, a first cladding layer formed with a
semiconductor material of a first conductive type on the substrate, an
active layer formed on the first cladding layer, and a second cladding
layer formed with a semiconductor material of a second conductive type on
the active layer, wherein concavo-convexes are formed on the interfaces
of the first cladding layer, the second cladding layer, and the active
layer, and the (100) substrate is a III-V or a IV-IV group semiconductor
substrate, and has a crystal orientation such that a (100) plane of the
(100) substrate is inclined 2 to 20.degree. toward the [0-1-1] direction
and 1 to 8.degree. toward the [0-11] direction.