Organosulfur compounds suitable as protected thiol-containing reactive organic layer precursors, for example 3,5-dimethoxy-.alpha.,.alpha.-dimethylbenzyloxycarbonyl-3-mercaptopropylt- riethoxysilane, are useful in methods of nanometer scale (nanoscale) patterning and fabrication of nanoscale structures on patterned surfaces. The compounds and methods enable the patternwise placement of nanoparticles, with nanometer resolution to form, for example, electrically conductive nanostructures.