A method for forming a film pattern, comprises: disposing a first bank forming material to a substrate so as to form a first bank layer; disposing a second bank forming material on the first bank layer so as to form a second bank layer; and pattering the first bank layer and the second bank layer so as to form a bank including a pattern forming region having a first pattern forming region and a second pattern forming region, the second pattern forming region having a width larger than a width of the first pattern forming region, and being continuously formed from the first pattern forming region, wherein the first bank layer has a sidewall facing the pattern forming region and a first contact angle of less than 50 degrees with respect to a functional liquid containing H.sub.2O on the sidewall, and the second bank layer has a second contact angle larger than the first contact angle with respect to the functional liquid.