An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

 
Web www.patentalert.com

< Apparatus and Method For Coupling Light to a Thin Film Optical Waveguide

> Thin Film Template For Fabrication of Two-Dimensional Quantum Dot Structures

> Enhancing Read and Write Sense Margins in a Resistive Sense Element

~ 00595