The invention relates to an overvoltage protection apparatus having a semiconductor substrate, a first doping region in order to provide a protection diode, and a second doping region in order to provide a protection resistance, with the second doping region being immediately adjacent to the first doping region.

 
Web www.patentalert.com

< Cobal disilicide structure

> Attachment of a QFN to a PCB

> Trench MOSFET

~ 00596