Various embodiments of the present invention are generally directed to an apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.

 
Web www.patentalert.com

< Non-Volatile Memory Cell with Complementary Resistive Memory Elements

> TEMPERATURE DEPENDENT SYSTEM FOR READING ST-RAM

> MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL

~ 00596