A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H.sub.2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.