A memory cell, the memory cell includes first and second electrodes and a
memory material element electrically coupling the first and second
electrodes. The memory material element comprises a first memory
material, such as GST, the first memory material having an electrical
property that can be changed by the application of energy. A thermal
insulating layer surrounds the memory material element. The thermal
insulating layer comprises a second memory material. A dielectric layer
separates the thermal insulating material from the memory material
element. A method for making a thermally insulated memory cell device is
also disclosed.