In one embodiment, a method of producing an optoelectronic nanostructure
includes preparing a substrate; providing a quantum well layer on the
substrate; etching a volume of the substrate to produce a photonic
crystal. The quantum dots are produced at multiple intersections of the
quantum well layer within the photonic crystal. Multiple quantum well
layers may also be provided so as to form multiple vertically aligned
quantum dots. In another embodiment, an optoelectronic nanostructure
includes a photonic crystal having a plurality of voids and
interconnecting veins; a plurality of quantum dots arranged between the
plurality of voids, wherein an electrical connection is provided to one
or more of the plurality of quantum dots through an associated
interconnecting vein.