An iPVD system is programmed to deposit uniform material, such as a
metallic material, into high aspect ratio nano-sized features on
semiconductor substrates using a process that enhances the feature
filling compared to the field deposition, while maximizing the size of
the grain features in the deposited material opening at the top of the
feature during the process. Sequential deposition and etching are
provided by controlling DC and high density power levels and other
parameters.