A magneto-resistance effect element can obtain a high output and makes it
possible to stabilize magnetization in a magnetization free layer therein
even if a sense current is caused to flow. The magneto-resistance effect
element is provided with a magnetization free layer whose magnetization
direction is variable, a magnetization pinned layer whose magnetization
direction is pinned, and an intermediate layer provided between the
magnetization free layer and the magnetization pinned layer, where when
no external magnetic field is present and no current flows, the
magnetization direction in the magnetization free layer is anti-parallel
to the magnetization direction pinned in the magnetization pinned layer,
an easy axis of magnetization in the magnetization free layer is parallel
to the magnetization direction pinned in the magnetization pinned layer,
and a sense current flows from the magnetization free layer to the
magnetization pinned layer.