A resistive random access memory (RRAM) cell that includes a first
electrode having a lower portion, a continuous side portion and an upper
portion, the lower portion and the continuous side portion having an
outer surface and an inner surface; a resistive layer having a lower
portion, a continuous side portion and an upper portion, the lower
portion and the continuous side portion having an outer surface and an
inner surface; and a second electrode having a lower portion, an upper
portion and an outer surface; wherein the outer surface of the resistive
layer directly contacts the inner surface of the first electrode.