A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell, and an alignment element positioned at least between the top electrode and the top surface of the memory element, the alignment element having an electrically conductive body tapering from the top electrode to the top surface of the memory element. Methods for forming the memory cell are also described.

 
Web www.patentalert.com

< TECHNOLOGY FOR BIT PATTERNED AND TRACK PATTERNED MAGNETIC MEDIA RECORDING

< Composite Heat Assisted Magnetic Recording Media With Temperature Tuned Intergranular Exchange

> NON-DESTRUCTIVE READ BACK FOR FERROELECTRIC DATA STORAGE DEVICE

> VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD

~ 00604