A metal-base transistor is suggested. The transistor comprises a first and
a second electrode (2, 6) and base electrode (6) to control current flow
between the first and second electrode. The first electrode (2) is made
from a semiconduction material. The base electrode (3) is a metal layer
deposited on top of the semiconducting material forming the first
electrode. According the invention the second electrode is formed by a
semiconducting nanowire (6) being in electrical contact with the base
electrode (3).