A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.

 
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< Magnetoresistive effect element having inner and outer pinned layers including a cobalt iron alloy

< Suppression of spin momentum transfer and related torques in magnetoresistive elements

> Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element

> Adapter configured to couple electrical component to slot in host device

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