In a method for manufacturing a flexible memory device and semiconductor
device, a stack including an element layer and an insulating layer which
seals the element layer is formed over a substrate having a separation
layer, and the stack is separated from the separation layer. The element
layer includes a memory element having a layer containing an organic
compound between a pair of electrodes, a first electrode layer and a
second electrode layer, and at least one of the pair of electrode layers
is formed using an alloy layer containing tin. The flexible memory device
and semiconductor device include a memory element having a layer
containing an organic compound between a pair of electrodes, a first
electrode layer and a second electrode layer, in which at least one of
the pair of electrode layers is formed using an alloy layer containing
tin.