By using a stacked gate transistor including a floating gate in a limiter, a threshold voltage Vth of the stacked gate transistor can be corrected by controlling the amount of charge accumulated in the floating gate of the stacked gate transistor even in the case where there are variations in the threshold voltage Vth of the stacked gate transistor.

 
Web www.patentalert.com

< Method of biasing and operating electro-optic polymer optical modulators

< Coated conductors

> Probe used for surface enhanced vibrational spectroscopic analysis and method of manufacturing the same

> Method for manufacturing semiconductor device, semiconductor device, and electrooptical device

~ 00606