A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.

 
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> Alkoxide compound, material for thin film formation, and process for thin film formation

> Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
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