A semiconductor memory device is disclosed in which a layer containing an organic compound is interposed between a pair of electrodes and, further, a first layer including a first metal oxide and a second layer including a second metal oxide are interposed between the pair of electrodes. One of the two layers including the metal oxide acts as a p-type semiconductor layer and the other acts as an n-type semiconductor layer. The first layer including the first metal oxide and the second layer including the second metal oxide form a p-n junction, which provides rectification characteristic to the semiconductor memory device.

 
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