A bonding apparatus (10) that bonds an electrode of a semiconductor die (12) and an electrode of a circuit board (19) using a metal nano paste includes a bump formation mechanism (20) that forms bump by injecting microdroplets of a metal nano paste on each electrode, a primary bonding mechanism (50) that carries out primary bonding to the electrodes in a non-conductive state by pressing the bump of the semiconductor die (12) against the bump of the circuit board (19), and a secondary bonding mechanism (80) that includes a pressurizing unit that pressurizes the primary bonded bump in bonding direction, and that carries out secondary bonding so that the electrodes become conductive by heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, removing the binder and the dispersant, and pressurizing and sintering the metal nanoparticles in the bump. With this, it is possible to efficiently bond the electrodes with a simple and easy way while reducing a bonding load.