To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R.sup.1 and R.sup.2 is replaced by a substituent capable of absorbing exposure light. ##STR00001## (where R.sup.1 and R.sup.2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) ##STR00002## (where R.sup.1, R.sup.2 and R.sup.3 may be the same or different, at least one of R.sup.1, R.sup.2 and R.sup.3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

 
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> Electronic device having an active layer including inorganic semiconductor fine particles covered with a protective layer and producing method thereof

> Field emitting light source and method for making the same

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