This application discloses a High-Frequency plasma processing apparatus
comprising a process chamber in which a substrate to be processed is
placed, a process-gas introduction line for introducing a process gas
into the process chamber, a first HF electrode provided in the process
chamber, a first HF power source for applying voltage to the first HF
electrode, thereby generating plasma of the process gas. The apparatus
further comprises a second HF electrode facing the first HF electrode in
the process chamber, interposing discharge space, and a series resonator
connecting the second HF electrode and the ground. The frequency of the
first HF power source is not lower than 30 MHz. The series resonator is
resonant as the distributed constant circuit at the frequency of the
first HF power source.