In a surface emitting semiconductor laser, the primary surface of a substrate includes first to third areas. The first and second areas are contiguous to each other, and the third area surrounds the first and second areas. A first DBR is provided on the substrate. An active layer is provided on the following: the first DBR; the first and second areas; and a boundary therebetween. A first semiconductor spacer layer is provided on the active layer. A second semiconductor spacer layer is provided on the first semiconductor spacer layer. The conductivity type of the first semiconductor spacer layer is different from that of the second semiconductor spacer layer. A tunnel junction region is on the first area and between the first and the second semiconductor spacer layers. The active layer, the first semiconductor spacer layer, the second semiconductor spacer layer, the tunnel junction region constitutes an optical cavity mesa, which includes low-resistance and high-resistance regions located on the first area and the second area, respectively. The low-resistance region includes the tunnel junction region. A second DBR is on the second semiconductor spacer layer and the first area. A first electrode is on the first and second areas and the boundary.