A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

 
Web www.patentalert.com

< Magnetic head assembly, magnetic head drive apparatus and manufacturing method of magnetic head assembly

< Tunneling magneto-resistive spin valve sensor with novel composite free layer

> Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

> Apparatus and method for virtualizing data storage media, such as for use in a data storage library providing resource virtualization

~ 00617