Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

 
Web www.patentalert.com

< Preventive recovery from adjacent track interference

< Encapsulant for a disc drive component

> Single command payload transfers block of security functions to a storage device

> Cassette for holding disks of different diameters
~ 00619