An organic thin film transistor with circular semiconducting elements applied to the substrate in a plurality of hexagonal patterns, a method of producing the same, and a shadow mask used in the method that allows for formation of the organic thin film transistor without need for precise alignment of the shadow mask on the substrate. The substrate has a plurality of thin film transistors, each having a drain electrode, a source electrode, a gate electrode, and a channel formed of semiconducting elements that, due to relative dimensions and alignments of the semiconducting elements, may connect both the drain electrode and the source electrode of one transistor but not two electrodes of adjacent transistors. The shadow mask includes openings in the hexagonal pattern, and the pattern is rotated at an angle of 15.degree. relative to longitudinal axes of the drain and source electrodes to form channels.