A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.