The present disclosure is broadly directed to a method for designing new MEMS micro-movers, particularly suited for, but not limited to, CMOS fabrication techniques, that are capable of large lateral displacement for tuning capacitors, fabricating capacitors, self-assembly of small gaps in CMOS processes, fabricating latching structures and other applications where lateral micro-positioning on the order of up to 10 .mu.m, or greater, is desired. Principles of self-assembly and electro-thermal actuation are used for designing micro-movers. In self-assembly, motion is induced in specific beams by designing a lateral effective residual stress gradient within the beams. The lateral residual stress gradient arises from purposefully offsetting certain layers of one material versus another material. For example, lower metal layers may be side by side with dielectric layers, both of which are positioned beneath a top metal layer of a CMOS-MEMS beam. In electro-thermal actuation, motion is induced in specific beams by designing a lateral gradient of temperature coefficient of expansion (TCE) within the beams. The lateral TCE gradient is achieved in the same manner as with self-assembly, by purposefully offsetting the lower metal layers with layers of dielectric with respect to the top metal layer of a CMOS-MEMS beam. A heater resistor, usually made from a CMOS polysilicon layer, is embedded into the beam or into an adjacent assembly to heat the beam. When heated, the TCE gradient will cause a stress gradient in the beam, resulting in the electro-thermal actuation. Because of the rules governing abstracts, this abstract should not be used to construe the claims.