There is provided a system and method for fabricating a fin field effect transistor. More specifically, in one embodiment, there is provided a method comprising depositing a layer of nitride on a substrate, applying a photolithographic mask on the layer of nitride to define a location of a wall, etching the layer of nitride to create the wall, removing the photolithographic mask, depositing a spacer layer adjacent to the wall, etching the spacer layer to create a spacer adjacent to the wall, wherein the spacer and the wall cover a first portion of the substrate, and etching a second portion of the substrate not covered by the spacer to create a trench.